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(R)
STW6NB90
N - CHANNEL 900V - 1.7 - 6.3A - TO-247 PowerMESHTM MOSFET
PRELIMINARY DATA
TYPE STW6NB90
s s s s s
V DSS 900 V
R DS(on) <2
ID 6.3 A
TYPICAL RDS(on) = 1.7 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2 1
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s HIGH CURRENT, HIGH SPEED SWITCHING
s
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (*) P tot dv/dt(1) Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 900 900 30 6.3 4 25 160 1.28 4 -65 to 150 150
(1) ISD 6A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
Unit V V V A A A W W/ o C V/ns
o o
C C 1/5
(*) Pulse width limited by safe operating area
February 1999
STW6NB90
THERMAL DATA
R thj-case
Rthj-amb
R thc-sink Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
0.78 30 0.1 300
C/W oC/W o C/W o C
o
AVALANCHE CHARACTERISTICS
Symbol IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) Max Value 6.3 700 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A V GS = 0 Min. 900 1 50 100 Typ. Max. Unit V A A nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 30 V
T c = 100 o C
ON ()
Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = V GS V GS = 10V Test Conditions I D = 250 A I D =3 A 6.3 Min. 3 Typ. 4 1.7 Max. 5 2 Unit V A
On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V
DYNAMIC
Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz ID = 3 A V GS = 0 Min. 1.5 Typ. 6 1400 160 18 Max. Unit S pF pF pF
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STW6NB90
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 450 V ID = 3 A VGS = 10 V R G = 4.7 (see test circuit, figure 3) V DD = 720 V R G = 4.7 ID =6 A V GS = 10 V VGS = 10 V Min. Typ. 20 10 40 15 15 55 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 720 V ID = 6 A R G = 4.7 V GS = 10 V (see test circuit, figure 5) Min. Typ. 15 15 25 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 6 A V GS = 0 650 4.6 14 I SD = 6 A di/dt = 100 A/s V DD = 100 V T j = 150 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 6.3 25 1.6 Unit A A V ns C A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
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STW6NB90
TO-247 MECHANICAL DATA
mm MIN. A D E F F3 F4 G H L L3 L4 L5 M Dia 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
DIM.
P025P
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STW6NB90
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .
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